PART |
Description |
Maker |
2SK2885 2SK2882 |
SILICON N-CHANNEL MOS TYPE N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
TPC8005-H |
CONNECTOR ACCESSORY Silicon N Channel MOS Type (High Speed U−MOS) Silicon N Channel MOS Type (High Speed U-MOS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
2SK349706 2SK3497 |
Silicon N Channel MOS Type High Power Amplifier Application
|
Toshiba Semiconductor
|
2SK2360 2SK2359 TC-2501 2SK2359-Z |
N-channel enhancement type DMOS From old datasheet system MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS type field effect transistor
|
NEC[NEC] Toshiba Semiconductor
|
2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation Toshiba Semiconductor
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
|
TOSHIBA
|